MO inspection equipment

advantages introduction

Necessary defect detection devices in high-end semiconductor manufacturing
Non destructive and non-contact methods are used to measure defects, foreign objects, and haze in the near surface layer of polished 300 mm silicon wafers
During the measurement process, scattering images of the surface can be monitored and recorded
Detecting defect sizes ranging from 10nm to 30nm

Parameter configuration

Equipped with independent optical path design and high-performance line scanning array dual-purpose camera
Using two different wavelength laser light sources
Adopting automatic switching of 1.25X, 2.5X, 5X, 10X, and 50X multi axis objective lenses
Paired with dual or multiple port EFEM units to dock with OHT&AMR for fully automatic loading and unloading

Function Description

Applicable products: 12 inch silicon wafers for semiconductors
Applicable process segments: surface grinding/surface polishing/cleaning/final inspection, etc
Function Description:
1. EFEM unit supports FOSB/FOUP/OC manual or AGV automatic feeding
2. Using laser scattering principle to achieve comprehensive measurement of wafers
3. Detect foreign objects, roughness, scratches, etc. on the surface of the wafer, and detect internal crystal defects below the surface (0-5um)
4. Equipped with laser marking function